保存工作 返回搜索结果 职责描述 职位概要 类似职位 Build a new ultra-wideband switch platform Shape the technical roadmap and engineering team 关于我们的客户 Our client is a semiconductor company developing high-performance RF and microwave integrated circuits for test and measurement, communications and other demanding electronic systems. 职责描述 Lead the architecture, design and development of ultra-wideband RF switch ICs covering frequencies from the kHz range to 30 GHz. Develop SPDT, SP4T and other multi-throw switch products for instrumentation, test and measurement, broadband microwave and RF signal-routing applications. Evaluate and develop reflective and absorptive switch architectures based on product requirements for insertion loss, isolation, return loss, linearity and switching behaviour. Design RF switch cores using RF-SOI or related silicon processes, including series-shunt FET structures, transistor stacks, bias networks, gate-control networks and integrated termination circuits. Address low-frequency design challenges, including low-frequency cut-off, bias-network behaviour, charge recovery, switching transients, gate lag and amplitude settling. Optimise high-frequency performance at 20-30 GHz through RF layout, transmission-line design, parasitic extraction and electromagnetic simulation. Lead die, package and application-board co-design, covering RF pads, bumps or bond wires, package interconnects, ground structures, port-to-port coupling and PCB transitions. Define product specifications and design trade-offs across insertion loss, isolation, return loss, P0.1dB/P1dB, IIP3, power handling, switching time and settling time. Work with foundry and device engineering teams to optimise RF-SOI devices, process options and design rules for broadband switch applications. Establish correlations between switch performance, device parameters, WAT data, wafer position, process variation and production yield. Lead schematic design, simulation, physical implementation, design reviews, tape-out and post-silicon debugging. Define on-wafer and packaged-device characterisation plans, including VNA measurements, calibration, de-embedding, large-signal testing and switching-transient measurements. Guide the development of production test solutions covering low-frequency performance, microwave S-parameters, switching behaviour, linearity and product screening. Drive products from engineering samples through qualification, customer validation and volume production. Review technical work completed by RFIC, layout, package, test and product engineering teams. Support product definition, customer discussions and the development of the wider broadband RF control IC roadmap. 理想的求职者 Master's degree or PhD in Electrical Engineering, Microelectronics, RF/Microwave Engineering, Semiconductor Devices or a related discipline. At least six years of RFIC or microwave IC design experience, with substantial hands-on responsibility for RF switch products. Demonstrated experience developing a broadband RF switch IC with a frequency range extending from the kHz or low-MHz region to at least 20 GHz; experience reaching 26.5 GHz or 30 GHz is preferred. Experience with RF-SOI switch design is strongly preferred. Relevant experience with silicon RF switch processes, GaAs pHEMT or other microwave switch technologies may also be considered. Strong understanding of series, shunt and series-shunt switch topologies, transistor stacking, voltage distribution, biasing and device sizing. Practical knowledge of the relationship between Ron, Coff, insertion loss, isolation, return loss, linearity and power handling. Experience designing reflective and/or absorptive RF switches. Experience with integrated broadband 50-ohm termination networks is preferred. Ability to address both ends of the frequency range, including low-frequency cut-off and settling behaviour as well as microwave parasitics and electromagnetic effects. Hands-on experience with RF and microwave electromagnetic simulation, parasitic extraction and package co-design. Familiarity with QFN, LGA, flip-chip or wafer-level packages for microwave IC products. Experience with on-wafer RF characterisation, microwave probing, VNA calibration and de-embedding methods such as SOLT, TRL or LRRM. Understanding of switching time, rise and fall time, RF settling time and amplitude-settling specifications, including the differences between these measurements. Experience with PVT verification, process corners, Monte Carlo analysis and design-for-yield methodology. Practical experience analysing wafer maps, WAT data, lot-to-lot variation, CP/FT correlation and production guard bands. At least one RF switch product taken through tape-out, package development, qualification and volume production. Ability to diagnose whether a performance issue originates from the circuit, device model, process, layout, package, evaluation board or measurement setup. Experience guiding junior engineers and heading cross-functional technical reviews. Professional English communication skills for technical discussions with foundries, package vendors, customers and international engineering teams. 薪酬待遇 Technical ownership of a single-chip RF switch platform covering the kHz range to 30 GHz. Opportunity to work across RFIC design, SOI device optimisation, electromagnetic modelling, package development and production testing. Direct involvement in both reflective and absorptive broadband switch architectures. Responsibility extending from product definition and tape-out to customer qualification and volume production. Scope to establish design methodology, test standards and engineering processes for a developing broadband RF control product line. Exposure to instrumentation, test and measurement, microwave communications and other performance-driven RF applications. A technical leadership role with influence over team development, foundry collaboration and future product planning. 联系 Marcus Zhu 职位编号 JN-102026-7128312 联系电话 +86 21 6035 3505 职位概要 职位类别 工程与制造 子类别 集成电路设计/半导体 行业 半导体 地区 上海 工作类型 全职 顾问名字 Marcus Zhu 顾问电话号码 +86 21 6035 3505 职位编号 JN-102026-7128312
